900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Unigroup

TMP17N15A Datasheet Preview

TMP17N15A Datasheet

N-Channel Trench MOSFET

No Preview Available !

TMP17N15A
Wuxi Unigroup Microelectronics CO.,Ltd.
150V N-Channel Trench MOSFET
FEATURES
Trench Power MOSFET Technology
Low RDS(ON)
Low Gate Charge
Optimized For Fast-switching Applications
APPLICATIONS
Synchronous Rectification in DC/DC and AC/DC Converters
Isolated DC/DC Converters in Telecom and Industrial
Device Marking and Package Information
Device
Package
TMP17N15A
TO-220
Marking
17N15A
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (VGS = 0V)
Continuous Drain Current
TC = 25ºC
TC = 100ºC
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation
TC = 25ºC
(note3)
TC = 100ºC
Operating Junction and Storage Temperature Range
(note1)
(note2)
VDSS
ID
IDM
VGSS
EAS
IAs
PD
TJ, Tstg
Thermal Resistance
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RthJC
RthJA
V1.0
1
Value
150
17
12.7
68
±20
10.3
8.3
78.9
39.5
-55~+175
Unit
V
A
A
V
mJ
A
W
W
ºC
Value
1.9
60
Unit
ºC/W
www.tsinghuaicwx.com




Unigroup

TMP17N15A Datasheet Preview

TMP17N15A Datasheet

N-Channel Trench MOSFET

No Preview Available !

TMP17N15A
Wuxi Unigroup Microelectronics CO.,Ltd.
Specifications TJ = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
Dynamic
IGSS
VGS(th)
RDS(on)
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
trr
Qrr
VGS = 0V, ID = 250µA
VDS = 150V, VGS = 0V, TJ = 25ºC
VDS = 150V, VGS = 0V, TJ = 100ºC
VGS = ±20V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 8.5A
VDS = 5V, ID = 8.5A
VGS = 0V,
VDS = 75V,
f = 1.0MHz
VDD = 75V, ID = 17A,
VGS = 10V
VDD = 75V, ID = 17A,
Vgs=10V,RG = 2.5
TC = 25ºC
TJ = 25ºC, ISD = 8.5A, VGS = 0V
IF = 17A,
diF/dt = 100A/μs
Value
Min. Typ.
Max.
150 -- --
-- -- 1
-- -- 100
-- -- ±100
3 45
-- 70 85
-- 16.3 --
-- 1440 --
-- 67 --
-- 26 --
-- 25 --
-- 9 --
-- 7 --
-- 7 --
-- 13 --
-- 12 --
-- 8 --
-- -- 17
-- -- 68
-- -- 1.2
-- 65 --
-- 160 --
Unit
V
μA
nA
V
mΩ
S
pF
nC
ns
A
V
ns
nC
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. VDD = 50V, RG = 25Ω, Starting TJ = 25°CL=0.3mH
3. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance.
V1.0
2 www.tsinghuaicwx.com


Part Number TMP17N15A
Description N-Channel Trench MOSFET
Maker Unigroup
Total Page 7 Pages
PDF Download

TMP17N15A Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 TMP17N15A N-Channel Trench MOSFET
Unigroup





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy