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Unigroup

TPA120R800A Datasheet Preview

TPA120R800A Datasheet

1200V Super-Junction Power MOSFET

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TPA120R800A
Wuxi Unigroup Microelectronics Company
1200V Super-Junction Power MOSFET
DESCRIPTION
1200V super-junction Power MOSFET
Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs
designed according to the SJ principle. The SJ MOSFET is a price-performance optimized
product enabling to target cost sensitive applications in Consumer and Lighting markets
designed by Wuxi Unigroup Microelectronics Company.
FEATURES
Very low FOM RDS(on)×Qg
100% avalanche tested
RoHS compliant
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Device Marking and Package Information
Device
Package
TPA120R800A
TO-220F
Key Performance Parameters
Parameter
Value
VDS @ Tj,max
RDS(on),max
ID
Qg,typ
IDM
1200
0.8
12
60
36
Marking
120R800A
Unit
V
Ω
A
nC
A
V1.0
1 www.tsinghuaicwx.com




Unigroup

TPA120R800A Datasheet Preview

TPA120R800A Datasheet

1200V Super-Junction Power MOSFET

No Preview Available !

TPA120R800A
Wuxi Unigroup Microelectronics Company
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Drain-Source Voltage (VGS = 0V)
Continuous Drain Current
Pulsed Drain Current
TC = 25ºC
TC = 100ºC
(note1)
Gate-Source Voltage
Single Pulse Avalanche Energy
(note2)
Avalanche Current
Power Dissipation
Continuous Body Diode Current
Pulsed Diode Forward Current
(note1)
MOSFET dv/dt ruggedness, VDS = 0...960V
Reverse diode dv/dt, VDS = 0…960V, ISD ID
Operating Junction and Storage Temperature Range
VDSS
ID
IDM
VGSS
EAS
IAS
PD
IS
ISM
dv/dt
dv/dt
TJ, Tstg
1200
12
7.2
36
±30
180
6
34
12
36
50
5
-55~+150
Unit
V
A
A
V
mJ
A
W
A
V/ns
A/us
ºC
Thermal Resistance
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RthJC
RthJA
Value
3.67
80
Unit
ºC/W
V1.0
2 www.tsinghuaicwx.com


Part Number TPA120R800A
Description 1200V Super-Junction Power MOSFET
Maker Unigroup
Total Page 8 Pages
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