900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Unigroup

TTP120N03AT Datasheet Preview

TTP120N03AT Datasheet

30V N-Channel Trench MOSFET

No Preview Available !

TTD120N03AT, TTP120N03AT
Wuxi Unigroup Microelectronics Company
30V N-Channel Trench MOSFET
FEATURES
Trench Power MOSFET Technology
Low RDS(ON)
Low Gate Charge
Optimized For Fast-switching Applications
APPLICATIONS
Synchronous Rectification in DC/DC and AC/DC Converters
Isolated DC/DC Converters in Telecom and Industrial
Device Marking and Package Information
Device
Package
TTP120N03AT
TO-220
TTD120N03AT
TO-252
Marking
120N03AT
120N03AT
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (VGS = 0V)
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation (TC = 25ºC)
Operating Junction and Storage Temperature Range
(note1)
(note2)
(note1)
VDSS
ID
IDM
VGSS
EAS
IAs
PD
TJ, Tstg
Value
TO-220, TO-252
30
120
480
±20
135
30
120
-55~+175
Thermal Resistance
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RthJC
RthJA
Value
TO-220, TO-252
1.24
60
Unit
V
A
A
V
mJ
A
W
ºC
Unit
K/W
V1.0
1 www.tsinghuaicwx.com




Unigroup

TTP120N03AT Datasheet Preview

TTP120N03AT Datasheet

30V N-Channel Trench MOSFET

No Preview Available !

TTD120N03AT, TTP120N03AT
Wuxi Unigroup Microelectronics Company
Specifications TJ = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
Gate-Source Threshold Voltage
IGSS
VGS(th)
Drain-Source On-Resistance (Note3) RDS(on)
Forward Transconductance (Note3)
Dynamic
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
trr
Qrr
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V, TJ = 25ºC
VDS = 30V, VGS = 0V, TJ = 125ºC
VGS = ±20V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 20A
VDS = 10V, ID = 20A
VGS = 0V,
VDS = 25V,
f = 1.0MHz
VDD = 15V, ID = 30A,
VGS = 10V
VDD = 20V, ID = 30A,
RG = 3
TC = 25ºC
TJ = 25ºC, ISD = 30A, VGS = 0V
IF = 30A,
diF/dt = 100A/μs
Min.
Value
Typ.
Max.
Unit
30 -- --
V
-- -- 1
μA
-- -- 100
-- -- ±100 nA
1 1.7 2.4 V
--
2.6 3.4
mΩ
--
3.6 4.7
mΩ
-- 30.2 --
S
-- 5782 --
-- 465 --
-- 376 --
-- 89 --
-- 9 --
-- 16 --
-- 12 --
-- 11 --
-- 40 --
-- 12 --
pF
nC
ns
-- -- 120
A
-- -- 480
-- -- 1.2 V
-- 60 --
ns
-- 120 --
nC
Notes
1. Repetitive Rating: Pulse Width limited by maximum junction temperature
2. IAS = 30A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1%
V1.0
2 www.tsinghuaicwx.com


Part Number TTP120N03AT
Description 30V N-Channel Trench MOSFET
Maker Unigroup
Total Page 8 Pages
PDF Download

TTP120N03AT Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 TTP120N03AT 30V N-Channel Trench MOSFET
Unigroup





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy