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TTD120N03AT, TTP120N03AT Wuxi Unigroup Microelectronics Company
30V N-Channel Trench MOSFET
FEATURES
Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications
APPLICATIONS
Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial
Device Marking and Package Information
Device
Package
TTP120N03AT
TO-220
TTD120N03AT
TO-252
Marking 120N03AT 120N03AT
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range
(note1)
(note2) (note1)
VDSS ID
TTP120N03AT Datasheet
