10N90 Key Features
- Lower Leakage Current: 25µA (Max.) @ VDS = 900V
- Improved Gate Charge
- SYMBOL
- ORDERING INFORMATION
- PARAMETER Drain-Source Voltage Gate-Source Voltage
- Part: 10N90
- Manufacturer: Unisonic Technologies (official site)
- Size: 215.50 KB
Other 10N90 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
10N90 | N-Channel Mosfet Transistor |
10N90 Description
1 TO-220 The UTC10N90 is a N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and mutation mode.