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10N90 - N-CHANNEL POWER MOSFET

General Description

The UTC10N90 is a N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology.

This technology allows a minimum on-state resistance and superior switching performance.

Key Features

  • Lower Leakage Current: 25µA (Max. ) @ VDS = 900V.
  • Improved Gate Charge.
  • SYMBOL 2.Drain 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 10N90 Preliminary Power MOSFET 10 Amps, 900 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION 1 TO-220 The UTC10N90 is a N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 10N90 is generally applied in high efficiency switch mode power supply. 1 TO-220F1 „ FEATURES * Lower Leakage Current: 25µA (Max.) @ VDS = 900V * Improved Gate Charge „ SYMBOL 2.Drain 1.Gate 3.