10N90 - N-Channel Mosfet Transistor

Inchange Semiconductor

Key Features

Drain Current ID= 10A@ TC=25℃.
Drain Source Voltage- : VDSS= 900V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max).
Avalanche Energy Specified.
Fast Switching.
Simple Drive Requirements.

10N90 n-channel mosfet transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	10N90
Manufacturer	Inchange Semiconductor
File Size	62.23 KB
Description	N-Channel Mosfet Transistor
Datasheet	10N90 Datasheet

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 10N90 ·FEATURES ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·APPLICATIONS ·Switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 900 ±30 V V ID Drain Current-Continuous 10 A IDM Drain Current-Single Plused 40 A PD Total Dissipation @TC=25℃ 156 W Tj Max.