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10N90 - N-CHANNEL POWER MOSFET

Description

The UTC10N90 is a N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology.

This technology allows a minimum on-state resistance and superior switching performance.

Features

  • Lower Leakage Current: 25µA (Max. ) @ VDS = 900V.
  • Improved Gate Charge.
  • SYMBOL 2.Drain 1.Gate 3.Source.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 10N90 Preliminary Power MOSFET 10 Amps, 900 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION 1 TO-220 The UTC10N90 is a N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 10N90 is generally applied in high efficiency switch mode power supply. 1 TO-220F1 „ FEATURES * Lower Leakage Current: 25µA (Max.) @ VDS = 900V * Improved Gate Charge „ SYMBOL 2.Drain 1.Gate 3.
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