* Low Gate Charge: 43nC (TYP.) * 11A, 500V, RDS(ON)=0.55Ω @ VGS=10V * Fast Switching * Low CRSS: 25pF (TYP.) * With 100% Avalanche Tested * Improved dv/dt Capability * F.

The UTC 11N50 is an N-channel enhancement mode Power FET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche a.

11N50-CB

11N50E

11N50K-MT

11N06LT

11N120CN

11N3L

11N40C

11N4LLF5

11N60

11N60C2

11N60C3

11N60E

11N60K-MT