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13N50 - N-CHANNEL POWER MOSFET

General Description

The UTC 13N50 is an N-Channel enhancement mode power MOSFET.

The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed.

It can also withstand high energy pulse under the avalanche and commutation mode conditions.

Key Features

  • ES.
  • RDS(ON) =0.48Ω @VGS = 10 V.
  • Ultra low gate charge (typical 43 nC ).
  • Low reverse transfer Capacitance ( CRSS = typical 20pF ).
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness 1 TO-220F1.
  • SYMBOL.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION 1 TO-220 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode conditions. The UTC 13N50 is ideally suitable for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge topology. 1 TO-220F „ FEATURES * RDS(ON) =0.