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Unisonic Technologies

18T10 Datasheet Preview

18T10 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
18T10
Preliminary
9A, 100V N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 18T10 is an N-channel enhancement mode Power
MOSFET, it uses UTC’s advanced technology to provide the
customers with a minimum on state resistance, high switching speed
and low gate charge, etc.
The UTC 18T10 is suitable for low voltage applications such as
DC/DC converters, etc.
FEATURES
* RDS(ON)<0.16@ VGS=10V
* High switching speed
* Low gate charge
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
18T10L-TN3-T
18T10G-TN3-T
18T10L-TN3-R
18T10G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R52-A54.a




Unisonic Technologies

18T10 Datasheet Preview

18T10 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

18T10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100 V
Gate-Source Voltage
VGSS
±20 V
Drain Current
Continuous TC=25°C
VGS @ 10V TC=100°C
ID
9A
5.6 A
Pulsed (Note 1)
IDM
30 A
Total Power Dissipation
TC=25°C
TA=25°C
PD
27.8 W
1.3 W
Junction Temperature
TJ 150 °C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
110
4.5
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=80V, VGS=0V
VDS=80V, VGS=0V, TJ=125°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note 3)
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=5A
VGS=4.5V, ID=1A
VDS=10V, ID=5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note 3)
Gate to Source Charge
Gate to Drain ("Miller") Charge
Turn-ON Delay Time (Note 3)
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=4.5V, VDS=80V, ID=5A
VDS=30V, ID=0.5A, RG=25,
VGS=10V
SOURCE- DRAIN DIODE
Forward On Voltage (Note 3)
VSD IS=5A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse test.
MIN TYP MAX UNIT
100 V
25 µA
250 µA
+100 nA
-100 nA
1 3V
160 m
440 m
5S
400 640 pF
55 pF
35 pF
23 50
5.25
5.5
33
28
160
45
nC
nC
nC
ns
ns
ns
ns
1.3 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
VER.a


Part Number 18T10
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
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18T10 Datasheet PDF






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