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Unisonic Technologies

2N7002KW Datasheet Preview

2N7002KW Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
2N7002KW
300mA, 60V N-CHANNEL
ENHANCEMENT MODE
MOSFET
DESCRIPTION
The UTC 2N7002KW uses advanced technology to provide
excellent RDS(ON), low gate charge and low gate voltages during
operation. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
2N7002KWG-AL3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-323
Pin Assignment
123
SGD
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R209-033.A




Unisonic Technologies

2N7002KW Datasheet Preview

2N7002KW Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

2N7002KW
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
60 V
±20 V
Drain Current
Continuous
Pulse(Note 2)
ID
300
800
mA
Power Dissipation
Derating above TA=25°C
PD
200 mW
1.6 mW/°C
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=10µA
60
Drain-Source Leakage Current
IDSS VDS=60V, VGS=0V
Gate-Source Leakage Current
IGSS VDS=0V, VGS=±20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=10V, ID=1mA
1.0 1.85
Static Drain-Source On-Resistance (Note)
RDS(ON)
VGS=10V, ID=300m A
VGS=4.5V, ID=200mA
DYNAMIC PARAMETERS
Input Capacitance
CISS
25
Output Capacitance
COSS VDS=25V, VGS=0V, f=1.0MHz
10
Reverse Transfer Capacitance
CRSS
3.0
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-OFF Delay Time
tD(ON)
tD(OFF)
ID=0.2 A, VDD=30V, VGS=10V,
RL=150, RG=10
12
20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS=0V, Is=300mA (Note )
0.88
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Maximum Continuous Drain-Source Diode
Forward Current
IS
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse width300μs, Duty cycle1%
MAX UNIT
V
1.0 µA
±10 µA
2.5 V
2
4
50 pF
25 pF
5.0 pF
20 ns
30 ns
1.5 V
0.8 A
300 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R209-033.A


Part Number 2N7002KW
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
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2N7002KW Datasheet PDF





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