30N06V-Q
DESCRIPTION
The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.
- FEATURES
- RDS(ON) < 40mΩ@VGS = 10 V, ID=15A
- Fast switching capability
- Avalanche energy specified
- SYMBOL
Power MOSFET
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
30N06VL-TM3-T
30N06VG-TM3-T
TO-251
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123 GDS
Packing Tube
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QW-R502-A29. a
Preliminary
Power MOSFET
- ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate to Source Voltage
VDSS VGSS
60 V ±20 V
Continuous...
