30N06V-Q Key Features
- RDS(ON) < 40mΩ@VGS = 10 V, ID=15A
- Fast switching capability
- Avalanche energy specified
- SYMBOL
- ORDERING INFORMATION
- Part: 30N06V-Q
- Manufacturer: Unisonic Technologies (official site)
- Size: 204.68 KB
Other 30N06V-Q Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
30N06 | N-Channel MOSFET |
Unisonic Technologies |
30N06 | N-CHANNEL POWER MOSFET |
| UMW UMW |
30N06 | 60V N-Channel Enhancement Mode Power MOSFET |
|
Unisonic Technologies |
30N06G | N-CHANNEL POWER MOSFET |
|
Unisonic Technologies |
30N06L | N-CHANNEL POWER MOSFET |
30N06V-Q Description
The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.