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30N06V-Q - N-CHANNEL POWER MOSFET

General Description

The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics.

Key Features

  • S.
  • RDS(ON) < 40mΩ@VGS = 10 V, ID=15A.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for 30N06V-Q (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 30N06V-Q. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 30N06V-Q Preliminary 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have b...

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e UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.  FEATURES * RDS(ON) < 40mΩ@VGS = 10 V, ID=15A * Fast switching capability * Avalanche energy specified  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 30N06VL-TM3-T 30N06VG-TM3-T TO-251 Note: Pin Assignment: G: Gate D: Drain S: Source