Datasheet4U Logo Datasheet4U.com
Unisonic Technologies logo

30N06-Q

Manufacturer: Unisonic Technologies

30N06-Q datasheet by Unisonic Technologies.

30N06-Q datasheet preview

30N06-Q Datasheet Details

Part number 30N06-Q
Datasheet 30N06-Q-UnisonicTechnologies.pdf
File Size 342.13 KB
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
30N06-Q page 2 30N06-Q page 3

30N06-Q Overview

The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.

30N06-Q Key Features

  • RDS(ON) = 40mΩ@VGS = 10 V, ID=15A
  • Ultra low gate charge ( typical 20nC )
  • Low reverse transfer Capacitance ( CRSS = typical 80 pF )
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability
  • SYMBOL
  • ORDERING INFORMATION

30N06 from other manufacturers

View 30N06 datasheet index

Brand Logo Part Number Description Other Manufacturers
Inchange Semiconductor Logo 30N06 N-Channel MOSFET Inchange Semiconductor
UTC Logo 30N06 N-CHANNEL POWER MOSFET UTC
UMW 30N06 60V N-Channel Enhancement Mode Power MOSFET UMW
UTC Logo 30N06G N-CHANNEL POWER MOSFET UTC
UTC Logo 30N06L N-CHANNEL POWER MOSFET UTC
Unisonic Technologies logo - Manufacturer

More Datasheets from Unisonic Technologies

View all Unisonic Technologies datasheets

Part Number Description
30N06V-Q N-CHANNEL POWER MOSFET
30N20 200V N-CHANNEL POWER MOSFET

30N06-Q Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts