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30N06 - 60V N-Channel Enhancement Mode Power MOSFET

General Description

The 30N06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired.

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Datasheet Details

Part number 30N06
Manufacturer UMW
File Size 1.19 MB
Description 60V N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet 30N06 Datasheet

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Full PDF Text Transcription (Reference)

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UMW R UMW 30N06 60V N-Channel Enhancement Mode Power MOSFET UMW 30N06 General Description The 30N06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.