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Unisonic Technologies

3N65K-MK4 Datasheet Preview

3N65K-MK4 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
3N65K-MK4
Preliminary
3A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 3N65K-MK4 is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) < 3.5@ VGS = 10V, ID = 1.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N65KL-TN3-R
3N65KG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
Pin Assignment
123
GDS
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R205-045.a




Unisonic Technologies

3N65K-MK4 Datasheet Preview

3N65K-MK4 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

3N65K-MK4
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 650 V
VGSS ±30 V
Avalanche Current (Note 2)
Continuous Drain Current
IAR 3.0 A
ID 3.0 A
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IDM
EAS
EAR
dv/dt
12 A
130 mJ
7.5 mJ
4.5 V/ns
Power Dissipation
Derate above 25°C
PD
50 W
0.4 W/°C
Junction Temperature
Operating Temperature
TJ
TOPR
+150
-55 ~ +150
°C
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=28mH, IAS=3A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD 3.0A, di/dt200A/μs, VDDBVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
110
2.5
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R205-045.a


Part Number 3N65K-MK4
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
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