3N65-MH Datasheet | Unisonic Technologies

DESCRIPTION The UTC 3N65-MH is a high voltage power MOSFET bines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. - FEATURES - RDS(ON) ≤ 4.5 Ω @ VGS=10V, ID=1.0A - Fast switching capability - Avalanche energy tested - Improved dv/dt capability, high ruggedness - SYMBOL Power MOSFET - ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N65L-TM3-T 3N65G-TM3-T 3N65L-TN3-R 3N65G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-251 TO-252 Pin Assignment Packing Tube Tape Reel - MARKING .unisonic..tw Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-653.a Preliminary Power MOSFET - ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT...