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3N65-MH - N-CHANNEL POWER MOSFET

Description

The UTC 3N65-MH is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 4.5 Ω @ VGS=10V, ID=1.0A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 3N65-MH Preliminary 3A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N65-MH is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) ≤ 4.5 Ω @ VGS=10V, ID=1.
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