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3N65-MH - N-CHANNEL POWER MOSFET

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General Description

The UTC 3N65-MH is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Overview

UNISONIC TECHNOLOGIES CO., LTD 3N65-MH Preliminary 3A, 650V N-CHANNEL POWER MOSFET.

Key Features

  • S.
  • RDS(ON) ≤ 4.5 Ω @ VGS=10V, ID=1.0A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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