3N65-MH Overview
The UTC 3N65-MH is a high voltage power MOSFET bines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.
3N65-MH Key Features
- RDS(ON) ≤ 4.5 Ω @ VGS=10V, ID=1.0A
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
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- ORDERING INFORMATION
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