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Unisonic Technologies

4N65K-MK Datasheet Preview

4N65K-MK Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
4N65K-MK
Preliminary
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N65K-MK is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristic. This power MOSFET is usually
used in high speed switching applications including power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) < 3.1@VGS = 10 V
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N65KL-TF3-T
4N65KG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
Pin Assignment
123
GDS
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R205-014.a




Unisonic Technologies

4N65K-MK Datasheet Preview

4N65K-MK Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

4N65K-MK
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 650 V
VGSS ±30 V
Avalanche Current (Note2)
Drain Current
Continuous
Pulsed (Note2)
Avalanche Energy
Single Pulsed (Note3)
Repetitive (Note2)
Power Dissipation
Derate above 25°C
IAR
ID
IDM
EAS
EAR
PD
4.4
4.0
16
50
10.6
36
0.288
A
A
A
mJ
mJ
W
W/°C
Peak Diode Recovery dv/dt (Note4)
dv/dt
4.5 V/ns
Junction Temperature
Operating Temperature
TJ
TOPR
+150
-55 ~ +150
°С
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=6.25mH, IAS=4A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD4.4A, di/dt200A/μs, VDDBVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
3.57
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R205-014.a


Part Number 4N65K-MK
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
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