Datasheet Details
| Part number | 4N65 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.09 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 4N65-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 4N65 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.09 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 4N65-InchangeSemiconductor.pdf |
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·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high efficiency switch mode power supply.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A ID(puls) Pulse Drain Current 16 A Ptot Total Dissipation@TC=25℃ 106 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.18 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W 4N65 isc website：.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| Zibo Seno | 4N65 | Power MOSFET | Zibo Seno |
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4N65 | N-Channel Power MOSFET | Unisonic Technologies |
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4N65 | 650V N Channel Power MOSFET | JINAN JINGHENG |
| PINGWEI | 4N65 | N-Channel MOSFET | PINGWEI |
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4N65-C | N-CHANNEL POWER MOSFET | Unisonic Technologies |
| Part Number | Description |
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