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4N65Z - 40A 650V N-CHANNEL POWER MOSFET

Description

The UTC 4N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic.

Features

  • S.
  • RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A.
  • Ultra Low Gate Charge ( typical 15 nC ).
  • Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ).
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL 1 Power MOSFET TO-220F.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 4N65Z 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.
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