Datasheet4U Logo Datasheet4U.com

4N65-Q - N-CHANNEL POWER MOSFET

General Description

The UTC 4N65-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic.

Key Features

  • S.
  • RDS(ON) ≤ 3.1 Ω @ VGS=10V, ID=2.2A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness Power MOSFET.
  • SYMBOL www. unisonic. com. tw Copyright © 2021 Unisonic Technologies Co. , Ltd 1 of 9 QW-R502-963.H 4N65-Q Power MOSFET.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
4N65-ML N-CHANNEL POWER MOSFET UTC
4N65-S N-CHANNEL POWER MOSFET UTC
4N65-TC1 650V N-CHANNEL POWER MOSFET UTC
4N65 Power MOSFET Zibo Seno
4N65 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Unisonic Technologies

Part Number Description
4N65-C N-CHANNEL POWER MOSFET
4N65-E N-CHANNEL POWER MOSFET
4N65-N N-CHANNEL POWER MOSFET
4N65-R N-CHANNEL POWER MOSFET
4N65-U N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 4N65-Q 4.0A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 3.1 Ω @ VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness Power MOSFET  SYMBOL www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-963.