Description
The UTC 4N65-N is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic.
Features
- S.
- RDS(ON) < 3.1Ω @ VGS = 10 V, ID = 2.2A.
- Fast Switching Capability.
- Avalanche Energy Specified.
- Improved dv/dt Capability, High Ruggedness.
- SYMBOL
Power MOSFET
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QW-R502-965.C
4N65-N
Power MOSFET.
4N65-N Datasheet
