4N80 Key Features
- RDS(on) < 3.0Ω @ VGS=10V, ID=2.0A
- High switching speed
- Improved dv/dt capability
- 100% avalanche tested
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: 4N80
- Manufacturer: Unisonic Technologies (official site)
- Size: 256.58 KB
Other 4N80 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
4N80 | N-Channel MOSFET Transistor |
Nell Power Semiconductor |
4N80 | N-Channel Power MOSFET |
Unisonic Technologies |
4N80-FC | N-CHANNEL POWER MOSFET |
|
Unisonic Technologies |
4N80-FCQ | 800V N-CHANNEL POWER MOSFET |
Motorola Semiconductor |
4N80E | MTB4N80E |
4N80 Description
The UTC 4N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy pulse in the avalanche and mutation mode.