4N90 Key Features
- RDS(ON) < 4.2Ω @ VGS=10V, ID=2.0A
- High switching speed
- 100% avalanche tested
- Improved dv/dt capability
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: 4N90
- Manufacturer: Unisonic Technologies (official site)
- Size: 444.97 KB
Other 4N90 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
4N90 | N-Channel MOSFET Transistor |
Fairchild |
4N90C | N-Channel MOSFET |
4N90 Description
The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and munication mode.