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4N90 - N-CHANNEL POWER MOSFET

General Description

The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology.

This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance.

Key Features

  • RDS(ON) < 4.2Ω @ VGS=10V, ID=2.0A.
  • High switching speed.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for 4N90 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 4N90. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 4N90 4A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to pro...

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N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and communication mode. The UTC 4N90 is particularly applied in high efficiency switch mode power supplies.  FEATURES * RDS(ON) < 4.2Ω @ VGS=10V, ID=2.

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