4N90 Datasheet and Specifications PDF

·Drain Current ID= 3.6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALU.

PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0; ID= 250µA VDS= VGS; ID=250µA IF=4A ;VGS= 0 VGS= 10V; ID=1.7A VG.

The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the .

* RDS(ON) < 4.2Ω @ VGS=10V, ID=2.0A * High switching speed * 100% avalanche tested * Improved dv/dt capability
* SYMBOL Power MOSFET
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N90L-TA3-T 4N90G-TA3-T 4N90L-TF3-T 4N90G-TF3-T 4N90L-TF1-T 4N90G-TF1-T 4N90L-TF2-T 4N90G-TF.