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4N90 - N-CHANNEL POWER MOSFET

Description

The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology.

This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance.

Features

  • RDS(ON) < 4.2Ω @ VGS=10V, ID=2.0A.
  • High switching speed.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 4N90 4A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and communication mode. The UTC 4N90 is particularly applied in high efficiency switch mode power supplies.  FEATURES * RDS(ON) < 4.2Ω @ VGS=10V, ID=2.
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