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6N60Z - N-CHANNEL POWER MOSFET

General Description

The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) < 1.75Ω @ VGS = 10V, ID = 3.1A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 6N60Z 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) < 1.75Ω @ VGS = 10V, ID = 3.1A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 6N60ZL-TF3-T 6N60ZG-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12 3 GD S Packing Tube www.unisonic.com.