6N60 Datasheet | Nell Power Semiconductor

SEMICONDUCTOR 6N60 Series RRoo HHSS Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell 6N60 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. Features RDS(ON) = 1.5Ω@VGS = 10V Ultra low gate charge(25n C max.) Low reverse transfer capacitance (CRSS = 10p F typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature GDS TO-251 (I-PAK) (6N60F) TO-252 (D-PAK) (6N60G) TO-220AB (6N60A) TO-220F (6N60AF) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(n C) max. 6 600 1.5 @ VGS = 10V 25 D (Drain) G (Gate) S (Source) .nellsemi. Page 1 of 10 SEMICONDUCTOR 6N60 Series RRoo HHSS Nell High Power...