6N60 - N-Channel Mosfet Transistor

Datasheet Summary

Features

Drain Current.
ID= 6A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max).
Avalanche Energy Specified.
Fast Switching.
Simple Drive Requirements.

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	6N60
Manufacturer	INCHANGE
File Size	149.56 KB
Description	N-Channel Mosfet Transistor
Datasheet	6N60 Datasheet
Additional preview pages of the 6N60 datasheet.

📁 Similar Datasheet

6N60 - N-CHANNEL MOSFET (CHONGQING PINGYANG)
6N60 - 600V N-CHANNEL POWER MOSFET (UTC)
6N60 - N-Channel Power MOSFET (nELL)
6N60 - N-CHANNEL MOSFET (ART CHIP)
6N60-C - N-CHANNEL POWER MOSFET (Unisonic Technologies)
6N60-CBS - N-CHANNEL MOSFET (UTC)
6N60-P - N-CHANNEL POWER MOSFET (Unisonic Technologies)
6N60A - N-Channel Power MOSFET (nELL)
6N60AF - N-Channel Power MOSFET (nELL)
6N60B - N-CHANNEL MOSFET (CHONGQING PINGYANG)

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 6N60 ·FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 6A IDM Drain Current-Single Plused 24 A PD Total Dissipation @TC=25℃ 125 W Tj Max.

Published: Sep 1, 2016 |