6N60 Datasheet and Specifications PDF

The 6N60 is a N-CHANNEL MOSFET.

Key Specifications

PackageTO-247
Mount TypeThrough Hole
Pins3
Height21.46 mm
Length16.26 mm
Width5.3 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part Number6N60 Datasheet
ManufacturerCHONGQING PINGYANG
Overview 6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE  6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 6.
* 6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A
* Low gate charge
* Low Ciss
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability TO-220AB 6N60 ITO-220AB 6N60F TO-263 6N60B TO-262 6N60H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Sour.
Part Number6N60 Datasheet
DescriptionN-Channel Power MOSFET
ManufacturerNell Power Semiconductor
Overview The Nell 6N60 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage o. RDS(ON) = 1.5Ω@VGS = 10V Ultra low gate charge(25nC max.) Low reverse transfer capacitance (CRSS = 10pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-251 (I-PAK) (6N60F) D D G S TO-252 (D-PAK) (6N60G) GDS TO-220AB.
Part Number6N60 Datasheet
DescriptionN-Channel Mosfet Transistor
ManufacturerInchange Semiconductor
Overview INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 6N60 ·FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resist.
*Drain Current
*ID= 6A@ TC=25℃
*Drain Source Voltage- : VDSS= 600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max)
*Avalanche Energy Specified
*Fast Switching
*Simple Drive Requirements
*DESCRITION
*Designed for high efficiency switch mode power supply.
*ABSOLUTE MAXIMUM RATINGS(Ta=2.
Part Number6N60 Datasheet
DescriptionN-CHANNEL MOSFET
ManufacturerART CHIP
Overview The 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. * RDS(ON) = 1.5Ω @VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 10pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL *Pb-free plating product number: 6N60L ORDERING INFORMATION Or.

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