6N65 Key Features
- RDS(ON) < 1.7Ω @VGS = 10V
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING INFORMATION
- Part: 6N65
- Manufacturer: Unisonic Technologies (official site)
- Size: 274.78 KB
Other 6N65 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
6N65-HC | N-CHANNEL POWER MOSFET |
|
Unisonic Technologies |
6N65-TC | N-CHANNEL MOSFET |
|
Unisonic Technologies |
6N65-TC2 | N-CHANNEL MOSFET |
STMicroelectronics |
6N65K3 | N-channel Power MOSFET |
|
STMicroelectronics |
6N65M2 | N-Channel Power MOSFET |
6N65 Description
The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.