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6N65K3 - N-channel Power MOSFET

Datasheet Summary

Description

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Features

  • 3 2 1 TO-220FP narrow leads Figure 1. Internal schematic diagram AM15572v1 Order code VDS RDS(on) max STF6N65K3(045Y) 650 V 1.3 Ω ID 5.4 A PTOT 30 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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Datasheet preview – 6N65K3

Datasheet Details

Part number 6N65K3
Manufacturer STMicroelectronics
File Size 517.03 KB
Description N-channel Power MOSFET
Datasheet download datasheet 6N65K3 Datasheet
Additional preview pages of the 6N65K3 datasheet.

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Full PDF Text Transcription

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STF6N65K3(045Y) N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET in a TO-220FP narrow leads package Datasheet − production data Features 3 2 1 TO-220FP narrow leads Figure 1. Internal schematic diagram AM15572v1 Order code VDS RDS(on) max STF6N65K3(045Y) 650 V 1.3 Ω ID 5.4 A PTOT 30 W • 100% avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • Switching applications Description This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
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