Datasheet4U Logo Datasheet4U.com

6N65Z - N-CHANNEL POWER MOSFET

General Description

The UTC 6N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) = 1.85Ω @VGS = 10V, ID=3.1A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
6N65-HC N-CHANNEL POWER MOSFET UTC
6N65-TC N-CHANNEL MOSFET UTC
6N65-TC2 N-CHANNEL MOSFET UTC
6N65K3 N-channel Power MOSFET STMicroelectronics
6N65M2 N-Channel Power MOSFET STMicroelectronics

Other Datasheets by Unisonic Technologies

Part Number Description
6N65Z-Q N-CHANNEL POWER MOSFET
6N65 N-CHANNEL POWER MOSFET
6N65-C N-CHANNEL POWER MOSFET
6N65-P N-CHANNEL POWER MOSFET
6N65K-MT N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 6N65Z 6.2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) = 1.85Ω @VGS = 10V, ID=3.1A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N65ZL-TF3-T 6N65ZG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F Pin Assignment 123 GDS Packing Tube www.