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6N65Z-Q - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 6N65Z-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) = 1.85Ω @VGS = 10V, ID=3.1A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Datasheet preview – 6N65Z-Q

Datasheet Details

Part number 6N65Z-Q
Manufacturer Unisonic Technologies
File Size 252.90 KB
Description N-CHANNEL POWER MOSFET
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UNISONIC TECHNOLOGIES CO., LTD 6N65Z-Q 6.2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65Z-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) = 1.85Ω @VGS = 10V, ID=3.1A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL 2.Drain Power MOSFET 1.Gate 3.
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