6N65-P Description
The UTC 6N65-P is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.
6N65-P Key Features
- RDS(ON) < 2.0Ω @ VGS = 10V, ID = 3.1A
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
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