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6N65-P - N-CHANNEL POWER MOSFET

General Description

The UTC 6N65-P is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) < 2.0Ω @ VGS = 10V, ID = 3.1A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 6N65-P 6.2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65-P is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) < 2.0Ω @ VGS = 10V, ID = 3.