n-channel power mosfet.
* RDS(ON) ≤ 1.75 Ω @ VGS=10V, ID=3.1A * Fast switching * 100% avalanche tested * Improved dv/dt capability
* SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
www.uni.
The UTC 6N90 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also ca.
Image gallery
TAGS
Download (Size : 537.69KB)