6N90 Key Features
- RDS(ON) ≤ 1.75 Ω @ VGS=10V, ID=3.1A
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: 6N90
- Manufacturer: Unisonic Technologies (official site)
- Size: 537.69 KB
Other 6N90 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
6N90-C | 6A 900V N-CHANNEL POWER MOSFET |
|
Unisonic Technologies |
6N90-FC | N-CHANNEL POWER MOSFET |
Fairchild |
6N90C | N-Channel MOSFET |
STMicroelectronics |
6N90K5 | N-channel Power MOSFET |
6N90 Description
The UTC 6N90 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and mutation mode.