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Unisonic Technologies
Unisonic Technologies

80N08 Datasheet Preview

80N08 Datasheet

N-CHANNEL 80V (D-S) MOSFET

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80N08 pdf
UNISONIC TECHNOLOGIES CO., LTD
80N08
Preliminary
N-CHANNEL 80V (D-S) MOSFET
„ DESCRIPTION
The UTC 80N08 is an N-channel MOSFET using UTC trench
technology. It can be used in applications, such as power supply
(secondary synchronous rectification), industrial and primary switch
etc.
„ FEATURES
* Trench FET Power MOSFETS Technology
* 100 % RG and UIS Tested
„ SYMBOL
D (2)
Power MOSFET
G (1)
S (3)
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
80N08L-TA3-R
80N08G-TA3-R
Note: G: GND, D: Drain, S: Source
Package
TO-220
Pin Assignment
123
GDS
Packing
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-468.a



Unisonic Technologies
Unisonic Technologies

80N08 Datasheet Preview

80N08 Datasheet

N-CHANNEL 80V (D-S) MOSFET

No Preview Available !

80N08 pdf
80N08
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TJ= 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
RATINGS
Continuous Drain Current (Note 1)
ID
TC=25 °C, VGS=10 V
TC=100 °C, VGS=10 V (Note 2)
80
80
Pulsed Drain Current (Note 2)
Avalanche Energy, Single Pulse (Note 2)
ID,pulse TC=25 °C
EAS ID=80A
320
810
Gate Source Voltage (Note 3)
Power Dissipation
VGS
PTOT
TC=25 °C
±20
300
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNIT
A
A
mJ
V
W
°C
°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62
0.5
UNIT
K/W
K/W
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=75V, VGS=0V, TJ=25°C
VDS=75V, VGS=0V, TJ=125°C 2
VDS=0V, VGS=20V
80
0.01
1
1
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 2)
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
Gate Plateau Voltage
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
VGS(TH)
RDS(ON)
CISS
COSS
CRSS
QGS
QGD
QG
Vplateau
tD(ON)
tR
tD(OFF)
tF
VDS=VGS, ID=250µA
VGS=10V, ID=80A
2.1 3.0
VGS=0V, VDS=25V, f=1.0MHz
4700
1260
580
VDD=60V, VGS=0~10V, ID=80A
VDD=40V, RG=2.2
ID=80A, VGS=10V
25
69
144
5.4
26
50
61
30
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Pulsed Current
IS
IS, pulse
TC=25°C (Note 2)
Drain-Source Diode Forward Voltage (Note1)
VSD IF=80A, VGS=0V, TJ=25°C
0.9
Reverse Recovery Time (Note 2)
Reverse Recovery Charge (Note 2)
tRR IF= IS, dIF/dt=100A/µs
QRR VR=40V
110
470
www.DatNaoSthee:e1t4. UC.ucrorment is limited by bondwire; with an θJC= 0.5K/W the chip is able to carry 132A at 25°C.
2. Defined by design. Not subject to production test.
3. Qualified at -20V and +20V.
MAX
1
100
100
4.0
12
37
116
180
80
320
1.3
140
590
UNIT
V
µA
nA
V
m
pF
pF
pF
nC
nC
nC
V
ns
ns
ns
ns
A
V
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-468.a


Part Number 80N08
Description N-CHANNEL 80V (D-S) MOSFET
Maker Unisonic Technologies
Total Page 3 Pages
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80N08 Datasheet PDF
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