80N08A - N-Channel MOSFET

Inchange Semiconductor

Key Features

Drain Current: ID= 80A@ TC=25℃.
Drain Source Voltage : VDSS= 80V(Min).
Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

80N08A n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	80N08A
Manufacturer	Inchange Semiconductor
File Size	214.52 KB
Description	N-Channel MOSFET
Datasheet	80N08A Datasheet

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current: ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power switching applications ·Hard switched and high frequency circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Plused PD Total Dissipation @TC=25℃ Tj Max.