Datasheet4U Logo Datasheet4U.com

9N90-Q - N-CHANNEL POWER MOSFET

General Description

The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • RDS(ON) < 1.4Ω @ VGS = 10V, ID = 4.5A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
9N90-C N-CHANNEL MOSFET UTC
9N90L N-Channel MOSFET Transistor Inchange Semiconductor
9N95-E N-CHANNEL MOSFET UTC

Other Datasheets by Unisonic Technologies

Part Number Description
9N90 N-CHANNEL MOSFET
9N95 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 9N90-Q 9A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 1.4Ω @ VGS = 10V, ID = 4.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N90L-TA3-T 9N90G-TA3-T 9N90L-T3P-T 9N90G-T3P-T Package TO-220 TO-3P Pin Assignment 123 GDS GDS Packing Tube Tube  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co.