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UF640-P - N-CHANNEL POWER MOSFET

General Description

These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications.

The UF640-P suitable for resonant and PWM converter topologies.

Key Features

  • S.
  • RDS(ON) =0.18Ω@ VGS=10V, ID=10A.
  • Ultra Low gate charge (typical 43nC).
  • Low reverse transfer capacitance (CRSS = typical 100 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 1 Power MOSFET TO-220.

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Full PDF Text Transcription for UF640-P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UF640-P. For precise diagrams, tables, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UF640-P 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low con...

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e kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640-P suitable for resonant and PWM converter topologies.  FEATURES * RDS(ON) =0.