Download UF640-P Datasheet PDF
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UF640-P Key Features

  • RDS(ON) =0.18Ω@ VGS=10V, ID=10A
  • Ultra Low gate charge (typical 43nC)
  • Low reverse transfer capacitance (CRSS = typical 100 pF)
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
  • SYMBOL
  • ORDERING INFORMATION

Other UF640-P Datasheets

Manufacturer Part Number Description
UTC Logo Unisonic Technologies UF640 N-CHANNEL POWER MOSFET

UF640-P Description

These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640-P suitable for resonant and PWM converter topologies.