UF640 Description
These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant and PWM converter topologies.
UF640 Key Features
- RDS(ON) < 0.18Ω @ VGS=10V, ID=10A
- Ultra Low gate charge (typical 43nC)
- Low reverse transfer capacitance (CRSS = typical 100 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- UF640G-AA3-R
- MARKING