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UF640-P - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications.

The UF640-P suitable for resonant and PWM converter topologies.

Features

  • S.
  • RDS(ON) =0.18Ω@ VGS=10V, ID=10A.
  • Ultra Low gate charge (typical 43nC).
  • Low reverse transfer capacitance (CRSS = typical 100 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 1 Power MOSFET TO-220.

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Datasheet preview – UF640-P

Datasheet Details

Part number UF640-P
Manufacturer Unisonic Technologies
File Size 221.08 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet UF640-P Datasheet
Additional preview pages of the UF640-P datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UF640-P 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640-P suitable for resonant and PWM converter topologies.  FEATURES * RDS(ON) =0.
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