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UF730-E - N-CHANNEL POWER MOSFET

General Description

The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Key Features

  • S.
  • RDS(ON)=0.85Ω@ VGS=10V, ID=3.0A.
  • Avalanche Energy Specified.
  • Rugged - SOA is Power Dissipation Limited.
  • Fast Switching Capability.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • SYMBOL 1 Power MOSFET TO-220.

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Full PDF Text Transcription for UF730-E (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UF730-E 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for h...

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N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  FEATURES * RDS(ON)=0.85Ω@ VGS=10V, ID=3.0A * Avalanche Energy Specified * Rugged - SOA is Power Dissipation Limited * Fast Switching Capability * Linear Transfer Characteristics * High Input Impedance  SYMBOL 1 Power MOSFET TO-220  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF730L-TA3-T UF730G-TA3-T Package TO-220 Pin Assignment 123 GDS Packing Tube www.unisonic.com.tw Copyright © 2013 Uniso