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Unisonic Technologies

UP1855A Datasheet Preview

UP1855A Datasheet

PNP SILICON TRANSISTOR

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UNISONIC TECHNOLOGIES CO., LTD
UP1855A
PNP SILICON TRANSISTOR
HIGH CURRENT TRANSISTOR
FEATURES
* High current switching
* Low VCE(SAT)
* High hFE
1
SOT-223
1
TO-126
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- UP1855AG-x-AA3-R
UP1855AL-x-T60-K
UP1855AG-x-T60-K
Note: Pin Assignment: E: Emitter B: Base C: Case
Package
SOT-223
TO-126
Pin Assignment
123
BCE
ECB
Packing
Tape Reel
Bulk
MARKING
SOT-223
TO-126
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R207-020.F




Unisonic Technologies

UP1855A Datasheet Preview

UP1855A Datasheet

PNP SILICON TRANSISTOR

No Preview Available !

UP1855A
PNP SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
-180
V
Collector -Emitter Voltage
VCEO
-170
V
Emitter -Base Voltage
VEBO -6 V
Collector Current (Pulse)
ICM -10 A
Collector Current (DC)
IC -4 A
Power Dissipation
SOT-223
TO-126
PD
1
W
1
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC = -100µA
Collector-Emitter Breakdown Voltage BVCEO IC = -10mA
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
BVEBO
ICBO
IEBO
IE = -100µA
VCB=-150V
VCB=-150V, Ta=100°C
VEB=-6V
Collector-Emitter Saturation Voltage
VCE (SAT)
IC=-100mA, IB=-5mA
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-3A, IB=-300mA
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE (SAT) IC=-3A, IB=-300mA
VBE (ON) IC=-3A, VCE=-5V
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC=-10mA, VCE=-5V
IC=-1A, VCE=-5V
IC=-3A, VCE=-5V
IC=-10A, VCE=-5V
Transition Frequency
Output Capacitance
fT IC=-100mA, VCE=-10V, f=50MHz
Cob VCB=-20V, f=1MHz
Switching Times
tON
tOFF
Note: Pulse test: tP 300µs, Duty cycle 2%
IC=-1A, VCC=-50V
IB1=-100mA, IB2=100mA
CLASSIFICATION OF hFE3
RANK
RANGE
A
28~75
MIN
-180
-170
-6
100
100
28
TYP
-210
-8
-30
-70
-110
-275
-970
-830
200
140
10
110
40
68
1030
MAX
-50
-1
-10
-60
-120
-150
-550
-1110
-950
300
UNIT
V
V
V
nA
µA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
B
75(MIN.)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R207-020.F


Part Number UP1855A
Description PNP SILICON TRANSISTOR
Maker Unisonic Technologies
Total Page 4 Pages
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