UT108N03 Key Features
- RDS(ON) < 5.3mΩ @VGS = 10 V, ID = 25 A
- Low Capacitance
- Optimized Gate Charge
- Fast Switching Capability
- Avalanche Energy Specified
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: UT108N03
- Manufacturer: Unisonic Technologies (official site)
- Size: 195.06 KB
Other UT108N03 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
VBsemi |
UT108N03L | N-Channel 30V MOSFET |
UT108N03 Description
As advanced N-channel level power MOSFET, the UT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance.