UT3N06 Key Features
- RDS(ON) ≤ 90 mΩ @ VGS=10V, ID=3.0A RDS(ON) ≤ 120 mΩ @ VGS=4.5V, ID=2.0A
- Simple drive requirement
- SYMBOL
- ORDERING INFORMATION
- UT3N06L-AB3-R
- UT3N06L-AE2-R
- UT3N06L-AE3-R
- UT3N06L-AG6-R
- UT3N06L-T92-K
- UT3N06L-TA3-T
- Part: UT3N06
- Manufacturer: Unisonic Technologies (official site)
- Size: 825.79 KB
Other UT3N06 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
UT3N06-Q | 60V N-CHANNEL POWER MOSFET |
VBsemi |
UT3N06G-AE3-R | N-Channel MOSFET |
UT3N06 Description
The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the mercial and industrial fields.