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UT5003 - N-CHANNEL/P-CHANNEL Power MOSFET

General Description

The UT5003 can provide excellent RDS (ON) and low gate charge by using UTC’s advanced trench technology.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • N-Channel: 30V, 7A RDS(ON) < 27.5mΩ @ VGS=10V, ID=7A RDS(ON) < 40mΩ @ VGS=4.5V, ID=6A.
  • P-Channel: -30V, -5A RDS(ON) < 45mΩ @ VGS=-10V, ID=-5A RDS(ON) < 80mΩ @ VGS=-4.5V, ID=-4A.
  • Super high dense cell design.
  • Reliable and rugged.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UT5003 DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)  DESCRIPTION The UT5003 can provide excellent RDS (ON) and low gate charge by using UTC’s advanced trench technology. This device is suitable for use as a load switch or in PWM applications.  FEATURES * N-Channel: 30V, 7A RDS(ON) < 27.5mΩ @ VGS=10V, ID=7A RDS(ON) < 40mΩ @ VGS=4.5V, ID=6A * P-Channel: -30V, -5A RDS(ON) < 45mΩ @ VGS=-10V, ID=-5A RDS(ON) < 80mΩ @ VGS=-4.5V, ID=-4A * Super high dense cell design * Reliable and rugged  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number UT5003G-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source Pin Assignment 12345678 S1 G1 S2 G2 D2 D2 D1 D1 Packing Tape Reel  MARKING www.unisonic.com.