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UTM2513 - Power MOSFET

Features

  • S.
  • RDS(ON) = 10.5mΩ(typ. ) @VGS = 10 V.
  • RDS(ON) = 16mΩ(typ. ) @VGS = 4.5 V.
  • Low capacitance.
  • Optimized gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 2.Drain 1.Gate Lead-free: UTM2513L Halogen-free: UTM2513G 3.Source.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UTM2513 N-CHANNEL ENHANCEMENT MODE Power MOSFET „ FEATURES * RDS(ON) = 10.5mΩ(typ.) @VGS = 10 V * RDS(ON) = 16mΩ(typ.) @VGS = 4.5 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain 1.Gate Lead-free: UTM2513L Halogen-free: UTM2513G 3.Source „ ORDERING INFORMATION Normal UTM2513-TN3-R UTM2513-TN3-T Ordering Number Lead Free Plating UTM2513L-TN3-R UTM2513L-TN3-T Halogen Free UTM2513G-TN3-R UTM2513G-TN3-T Package TO-252 TO-252 Pin Assignment 123 GDS GDS Packing Tape Reel Tube www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-228.
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