UTT108N03 Description
Power MOSFET As advanced N-channel level power MOSFET, the UTT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance.
UTT108N03 Key Features
- RDS(ON) = 6.0mΩ @VGS = 10V
- Low Capacitance
- Optimized Gate Charge
- Fast Switching Capability
- Avalanche Energy Specified
- SYMBOL
- ORDERING INFORMATION
- http://..co.kr/