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UTT100N06 - N-CHANNEL POWER MOSFET

General Description

The UTC UTT100N06 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.

It also can withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • Fast switching speed.
  • RDS(ON) < 7.0mΩ @ VGS=10V, ID=50A.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTT100N06 100A, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UTT100N06 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.  FEATURES * Fast switching speed * RDS(ON) < 7.0mΩ @ VGS=10V, ID=50A * 100% avalanche tested * Improved dv/dt capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT100N06L-TA3-T UTT100N06G-TA3-T UTT100N06L-TF2-T UTT100N06G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F2 Pin Assignment 123 GD S GD S Packing Tube Tube www.unisonic.com.