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UTT108N03 - N-CHANNEL POWER MOSFET

General Description

As advanced N-channel level power MOSFET, the UTT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance.

Key Features

  • TO-220.
  • RDS(ON) = 6.0mΩ @VGS = 10V.
  • Low Capacitance.
  • Optimized Gate Charge.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • SYMBOL 2.Drain 1.Gate www. DataSheet. net/ 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTT108N03 30V, 108A N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET As advanced N-channel level power MOSFET, the UTT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. 1 „ FEATURES TO-220 * RDS(ON) = 6.0mΩ @VGS = 10V * Low Capacitance * Optimized Gate Charge * Fast Switching Capability * Avalanche Energy Specified „ SYMBOL 2.Drain 1.Gate www.DataSheet.net/ 3.Source „ ORDERING INFORMATION Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free UTT108N03L-TA3-T UTT108N03G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.