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UTT40N08 - N-CHANNEL POWER MOSFET

General Description

The UTT40N08 power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

Key Features

  • S.
  • RDS(ON) < 45mΩ @VGS = 10 V.
  • Low capacitance.
  • Optimized gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Full PDF Text Transcription for UTT40N08 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UTT40N08. For precise diagrams, tables, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UTT40N08 Preliminary 40A, 80V N-CHANNEL POWER MOSFET  DESCRIPTION The UTT40N08 power MOSFET provide the designer with the best combination...

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e UTT40N08 power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness  FEATURES * RDS(ON) < 45mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT40N08L-TN3-R UTT40N08G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GDS Packing Tape Reel  MARKING INFORMATION PACKAGE TO-252 www.unisonic.com.tw Copyright © 2014 Unisonic Techno